TK650A60F,S4X

Toshiba Semiconductor and Storage

Producto No:

TK650A60F,S4X

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Paquete:

TO-220SIS

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Descripción:

MOSFET N-CH 600V 11A TO220SIS

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En stock : 19

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	650mOhm @ 5.5A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4V @ 1.16mA
Drain to Source Voltage (Vdss)	600 V
Series	U-MOSIX
Power Dissipation (Max)	45W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK650A60