TK9A90E,S4X

Toshiba Semiconductor and Storage

Producto No:

TK9A90E,S4X

Fabricante:

Paquete:

TO-220SIS

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 900V 9A TO220SIS

Cantidad:

Entrega:

Pago:

En stock : 11

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	1.3Ohm @ 4.5A, 10V
Supplier Device Package	TO-220SIS
Vgs(th) (Max) @ Id	4V @ 900µA
Drain to Source Voltage (Vdss)	900 V
Series	π-MOSVIII
Power Dissipation (Max)	50W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK9A90