Hogar / FET, MOSFET Arrays / TPC8211(TE12L,Q,M)
minImg

TPC8211(TE12L,Q,M)

Toshiba Semiconductor and Storage

Producto No:

TPC8211(TE12L,Q,M)

Paquete:

8-SOP (5.5x6.0)

Lote:

-

Ficha de datos:

pdf.png

Descripción:

MOSFET 2N-CH 30V 5.5A SOP8

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Operating Temperature 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 36mOhm @ 3A, 10V
Supplier Device Package 8-SOP (5.5x6.0)
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-SOIC (0.173", 4.40mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 450mW
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 5.5A
Package Tape & Reel (TR)
Base Product Number TPC8211