TPN1200APL,L1Q

Toshiba Semiconductor and Storage

Producto No:

TPN1200APL,L1Q

Fabricante:

Paquete:

8-TSON Advance (3.1x3.1)

Lote:

Ficha de datos:

Descripción:

PB-F POWER MOSFET TRANSISTOR TSO

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En stock : 1811

Mínimo: 1 Múltiplos: 1

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1855 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	11.5mOhm @ 20A, 10V
Supplier Device Package	8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id	2.5V @ 300µA
Drain to Source Voltage (Vdss)	100 V
Series	U-MOSIX-H
Power Dissipation (Max)	630mW (Ta), 104W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)