TPN2010FNH,L1Q

Toshiba Semiconductor and Storage

Producto No:

TPN2010FNH,L1Q

Fabricante:

Paquete:

8-TSON Advance (3.1x3.1)

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 250V 5.6A 8TSON

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En stock : 2688

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	198mOhm @ 2.8A, 10V
Supplier Device Package	8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id	4V @ 200µA
Drain to Source Voltage (Vdss)	250 V
Series	U-MOSVIII-H
Power Dissipation (Max)	700mW (Ta), 39W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	5.6A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	TPN2010