TPW1R005PL,L1Q

Toshiba Semiconductor and Storage

Producto No:

TPW1R005PL,L1Q

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Paquete:

8-DSOP Advance

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Descripción:

MOSFET N-CH 45V 300A 8DSOP

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En stock : 14722

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9600 pF @ 22.5 V
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	8-DSOP Advance
Vgs(th) (Max) @ Id	2.4V @ 1mA
Drain to Source Voltage (Vdss)	45 V
Series	U-MOSIX-H
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPW1R005