TPW2R508NH,L1Q

Toshiba Semiconductor and Storage

Producto No:

TPW2R508NH,L1Q

Fabricante:

Paquete:

8-DSOP Advance

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Descripción:

PB-F POWER MOSFET TRANSISTOR DOS

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En stock : 1735

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2.5mOhm @ 50A, 10V
Supplier Device Package	8-DSOP Advance
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	75 V
Series	U-MOSVIII-H
Power Dissipation (Max)	800mW (Ta), 142W (Tc)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	150A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)