TRS12N65FB,S1Q

Toshiba Semiconductor and Storage

Producto No:

TRS12N65FB,S1Q

Fabricante:

Paquete:

TO-247

Lote:

Ficha de datos:

Descripción:

SIC SBD TO-247 V=650 IF=12A

Cantidad:

Entrega:

Pago:

En stock : 55

Mínimo: 1 Múltiplos: 1

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-247
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Series	-
Package / Case	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Diode Configuration	1 Pair Common Cathode
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 6 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io) (per Diode)	6A (DC)
Operating Temperature - Junction	175°C
Base Product Number	TRS12N65