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TSM650N15CR

Taiwan Semiconductor Corporation

Producto No:

TSM650N15CR

Paquete:

8-PDFN (5x6)

Lote:

-

Ficha de datos:

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Descripción:

150V, 24A, SINGLE N-CHANNEL POWE

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1829 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 65mOhm @ 4A, 10V
Supplier Device Package 8-PDFN (5x6)
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 150 V
Series -
Power Dissipation (Max) 2.6W (Ta), 96W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 4A (Ta), 24A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number TSM650