TSM80N1R2CI

Taiwan Semiconductor Corporation

Producto No:

TSM80N1R2CI

Fabricante:

Paquete:

ITO-220

Lote:

Ficha de datos:

Descripción:

800V, 5.5A, SINGLE N-CHANNEL POW

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Nombre de contacto

Correo electrónico

Nombre de la empresa

País

Cantidad

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	685 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	19.4 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.8A, 10V
Supplier Device Package	ITO-220
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	800 V
Series	-
Power Dissipation (Max)	25W (Tc)
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM80