TW030Z120C,S1F

Toshiba Semiconductor and Storage

Producto No:

TW030Z120C,S1F

Fabricante:

Paquete:

TO-247-4L(X)

Lote:

Ficha de datos:

Descripción:

G3 1200V SIC-MOSFET TO-247-4L 3

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Entrega:

Pago:

En stock : Por favor investigación

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2925 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	41mOhm @ 30A, 18V
Supplier Device Package	TO-247-4L(X)
Vgs(th) (Max) @ Id	5V @ 13mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	249W (Tc)
Package / Case	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube