TW060N120C,S1F

Toshiba Semiconductor and Storage

Producto No:

TW060N120C,S1F

Fabricante:

Paquete:

TO-247

Lote:

Ficha de datos:

Descripción:

G3 1200V SIC-MOSFET TO-247 60MO

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Pago:

En stock : 90

Mínimo: 1 Múltiplos: 1

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1530 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	78mOhm @ 18A, 18V
Supplier Device Package	TO-247
Vgs(th) (Max) @ Id	5V @ 4.2mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	170W (Tc)
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube