SQUN702E-T1_GE3

Vishay Siliconix

Producto No:

SQUN702E-T1_GE3

Fabricante:

Paquete:

Die

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Ficha de datos:

Descripción:

MOSFET N&P-CH COMMON DRAIN

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En stock : Por favor investigación

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	N and P-Channel, Common Drain
Input Capacitance (Ciss) (Max) @ Vds	1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Rds On (Max) @ Id, Vgs	9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Supplier Device Package	Die
Vgs(th) (Max) @ Id	2.5V @ 250µA, 3.5V @ 250µA
Drain to Source Voltage (Vdss)	40V, 200V
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	Die
Technology	MOSFET (Metal Oxide)
Power - Max	48W (Tc), 60W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	30A (Tc), 20A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SQUN702