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AIDW10S65C5XKSA1

Infineon Technologies

Prodotto No:

AIDW10S65C5XKSA1

Pacchetto:

PG-TO247-3-41

Batch:

-

Scheda tecnica:

-

Descrizione:

DIODE SIL CARB 650V 10A TO247-3

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 303pF @ 1V, 1MHz
Mounting Type Through Hole
Product Status Obsolete
Supplier Device Package PG-TO247-3-41
Current - Reverse Leakage @ Vr 60 µA @ 650 V
Series Automotive, AEC-Q100/101, CoolSiC™
Package / Case TO-247-3
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Mfr Infineon Technologies
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tube
Operating Temperature - Junction -40°C ~ 175°C
Current - Average Rectified (Io) 10A
Base Product Number AIDW10