minImg

ALD212900APAL

Advanced Linear Devices Inc.

Prodotto No:

ALD212900APAL

Pacchetto:

8-PDIP

Batch:

-

Scheda tecnica:

pdf.png

Descrizione:

MOSFET 2N-CH 10.6V 0.08A 8DIP

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature 0°C ~ 70°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual) Matched Pair
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 5V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 14Ohm
Supplier Device Package 8-PDIP
Vgs(th) (Max) @ Id 10mV @ 20µA
Drain to Source Voltage (Vdss) 10.6V
Series EPAD®, Zero Threshold™
Package / Case 8-DIP (0.300", 7.62mm)
Technology MOSFET (Metal Oxide)
Power - Max 500mW
Mfr Advanced Linear Devices Inc.
Current - Continuous Drain (Id) @ 25°C 80mA
Package Tube
Base Product Number ALD212900