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APTM100A12STG

Microsemi Corporation

Prodotto No:

APTM100A12STG

Pacchetto:

SP3

Batch:

-

Scheda tecnica:

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Descrizione:

MOSFET 2N-CH 1000V 68A LP8W

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 17400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 616nC @ 10V
Mounting Type Chassis Mount
Product Status Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs 120mOhm @ 34A, 10V
Supplier Device Package SP3
Vgs(th) (Max) @ Id 5V @ 10mA
Drain to Source Voltage (Vdss) 1000V (1kV)
Series -
Package / Case SP3
Technology MOSFET (Metal Oxide)
Power - Max 1250W
Mfr Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C 68A
Package Bulk
Base Product Number APTM100