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APTM10DDAM09T3G

Microsemi Corporation

Prodotto No:

APTM10DDAM09T3G

Pacchetto:

SP3

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET 2N-CH 100V 139A SP3

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 9875pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V
Mounting Type Chassis Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 10mOhm @ 69.5A, 10V
Supplier Device Package SP3
Vgs(th) (Max) @ Id 4V @ 2.5mA
Drain to Source Voltage (Vdss) 100V
Series -
Package / Case SP3
Technology MOSFET (Metal Oxide)
Power - Max 390W
Mfr Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C 139A
Package Bulk
Base Product Number APTM10