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CSICD10-650 BK

Central Semiconductor Corp

Prodotto No:

CSICD10-650 BK

Pacchetto:

DPAK

Batch:

-

Scheda tecnica:

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Descrizione:

DIODE SIL CARBIDE 650V 10A DPAK

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 325pF @ 1V, 1MHz
Mounting Type Surface Mount
Product Status Obsolete
Supplier Device Package DPAK
Current - Reverse Leakage @ Vr 125 µA @ 650 V
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Mfr Central Semiconductor Corp
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tube
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 10A