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FDMC2610

Fairchild Semiconductor

Prodotto No:

FDMC2610

Pacchetto:

8-MLP (3.3x3.3)

Batch:

-

Scheda tecnica:

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Descrizione:

N-CHANNEL ULTRAFET TRENCH MOSFET

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 960 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 200mOhm @ 2.2A, 10V
Supplier Device Package 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 200 V
Series UniFET™
Power Dissipation (Max) 2.1W (Ta), 42W (Tc)
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta), 9.5A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Bulk