Casa / FET, MOSFET Arrays / FF8MR12W1M1HS4PB11BPSA1
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FF8MR12W1M1HS4PB11BPSA1

Infineon Technologies

Prodotto No:

FF8MR12W1M1HS4PB11BPSA1

Pacchetto:

AG-EASY1B

Batch:

-

Scheda tecnica:

-

Descrizione:

LOW POWER EASY

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

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In magazzino : 30

Minimo: 1 Multipli: 1

Qty

Prezzo unitario

Prezzo Ext

  • 1

    $178.296

    $178.296

  • 10

    $166.9948

    $1669.948

  • 30

    $160.716886

    $4821.50658

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature Silicon Carbide (SiC)
Configuration 2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 800V
Gate Charge (Qg) (Max) @ Vgs 297nC @ 18V
Mounting Type Chassis Mount
Product Status Active
Rds On (Max) @ Id, Vgs 8.1mOhm @ 100A, 18V
Supplier Device Package AG-EASY1B
Vgs(th) (Max) @ Id 5.15V @ 40mA
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Series CoolSiC™
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max -
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Package Tray
Base Product Number FF8MR12