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FGB5N60UNDF

Fairchild Semiconductor

Prodotto No:

FGB5N60UNDF

Pacchetto:

TO-263AB (D²PAK)

Batch:

-

Scheda tecnica:

-

Descrizione:

INSULATED GATE BIPOLAR TRANSISTO

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
Test Condition 400V, 5A, 10Ohm, 15V
Input Type Standard
Reverse Recovery Time (trr) 35 ns
Switching Energy 80µJ (on), 70µJ (off)
Current - Collector (Ic) (Max) 10 A
Mounting Type Surface Mount
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Td (on/off) @ 25°C 5.4ns/25.4ns
Supplier Device Package TO-263AB (D²PAK)
Current - Collector Pulsed (Icm) 15 A
Series -
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 5A
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge 12.1 nC
Power - Max 73.5 W
Mfr Fairchild Semiconductor
Package Bulk
IGBT Type NPT
Base Product Number FGB5N60