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GB01SLT06-214

GeneSiC Semiconductor

Prodotto No:

GB01SLT06-214

Pacchetto:

DO-214AA

Batch:

-

Scheda tecnica:

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Descrizione:

DIODE SIL CARB 650V 1A DO214AA

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 76pF @ 1V, 1MHz
Mounting Type Surface Mount
Product Status Active
Supplier Device Package DO-214AA
Current - Reverse Leakage @ Vr 10 µA @ 6.5 V
Series SiC Schottky MPS™
Package / Case DO-214AA, SMB
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 2 V @ 1 A
Mfr GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tape & Reel (TR)
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 1A
Base Product Number GB01SLT06