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HAT2210RWS-E

Renesas Electronics America Inc

Prodotto No:

HAT2210RWS-E

Pacchetto:

8-SOP

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-PAK 8SOP

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature 150°C
FET Feature Logic Level Gate, 4.5V Drive
Configuration 2 N-Channel (Dual), Schottky
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 10V, 1330pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V, 11nC @ 4.5V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Supplier Device Package 8-SOP
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 1.5W (Ta)
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta), 8A (Ta)
Package Tape & Reel (TR)
Base Product Number HAT2210