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IDC08S60CEX1SA2

Infineon Technologies

Prodotto No:

IDC08S60CEX1SA2

Pacchetto:

Die

Batch:

-

Scheda tecnica:

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Descrizione:

DIODE SIL CARBIDE 600V 8A DIE

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 310pF @ 1V, 1MHz
Mounting Type Surface Mount
Product Status Obsolete
Supplier Device Package Die
Current - Reverse Leakage @ Vr 100 µA @ 600 V
Series CoolSiC™+
Package / Case Die
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Mfr Infineon Technologies
Voltage - DC Reverse (Vr) (Max) 600 V
Package Bulk
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 8A
Base Product Number IDC08S60