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IRF7910TRPBF

Infineon Technologies

Prodotto No:

IRF7910TRPBF

Pacchetto:

8-SO

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET 2N-CH 12V 10A 8SOIC

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 15mOhm @ 8A, 4.5V
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 2V @ 250µA
Drain to Source Voltage (Vdss) 12V
Series HEXFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 2W
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 10A
Package Tape & Reel (TR)
Base Product Number IRF7910