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IRFBC30L

Vishay Siliconix

Prodotto No:

IRFBC30L

Produttore:

Vishay Siliconix

Pacchetto:

I2PAK

Batch:

-

Scheda tecnica:

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Descrizione:

MOSFET N-CH 600V 3.6A I2PAK

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V
Supplier Device Package I2PAK
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series -
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IRFBC30