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IRL6372TRPBF

Infineon Technologies

Prodotto No:

IRL6372TRPBF

Pacchetto:

8-SO

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET 2N-CH 30V 8.1A 8SOIC

Quantità:

Consegna:

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Pagamento:

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In magazzino : 6419

Minimo: 1 Multipli: 1

Qty

Prezzo unitario

Prezzo Ext

  • 1

    $0.855

    $0.855

  • 10

    $0.7011

    $7.011

  • 100

    $0.545015

    $54.5015

  • 500

    $0.461985

    $230.9925

  • 1000

    $0.376342

    $376.342

  • 2000

    $0.354284

    $708.568

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 17.9mOhm @ 8.1A, 4.5V
Supplier Device Package 8-SO
Vgs(th) (Max) @ Id 1.1V @ 10µA
Drain to Source Voltage (Vdss) 30V
Series HEXFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Power - Max 2W
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 8.1A
Package Tape & Reel (TR)
Base Product Number IRL6372