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NDC632P

Fairchild Semiconductor

Prodotto No:

NDC632P

Pacchetto:

SuperSOT™-6

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET P-CH 20V 2.7A SUPERSOT6

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 140mOhm @ 2.7A, 4.5V
Supplier Device Package SuperSOT™-6
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series -
Power Dissipation (Max) 1.6W (Ta)
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Vgs (Max) -8V
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Package Bulk