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NSB8GTHE3_B/P

Vishay General Semiconductor - Diodes Division

Prodotto No:

NSB8GTHE3_B/P

Pacchetto:

TO-263AB (D²PAK)

Batch:

-

Scheda tecnica:

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Descrizione:

DIODE GEN PURP 400V 8A TO263AB

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Speed Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F 55pF @ 4V, 1MHz
Mounting Type Surface Mount
Product Status Active
Supplier Device Package TO-263AB (D²PAK)
Current - Reverse Leakage @ Vr 10 µA @ 400 V
Series Automotive, AEC-Q101
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 8 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 400 V
Package Tube
Operating Temperature - Junction -55°C ~ 150°C
Current - Average Rectified (Io) 8A
Base Product Number NSB8