Casa / Single FETs, MOSFETs / PJD80N04-AU_L2_000A1
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PJD80N04-AU_L2_000A1

Panjit International Inc.

Prodotto No:

PJD80N04-AU_L2_000A1

Pacchetto:

TO-252

Batch:

-

Scheda tecnica:

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Descrizione:

40V N-CHANNEL ENHANCEMENT MODE M

Quantità:

Consegna:

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Pagamento:

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In magazzino : 5990

Minimo: 1 Multipli: 1

Qty

Prezzo unitario

Prezzo Ext

  • 1

    $1.064

    $1.064

  • 10

    $0.874

    $8.74

  • 100

    $0.67982

    $67.982

  • 500

    $0.576194

    $288.097

  • 1000

    $0.469376

    $469.376

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1258 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V
Supplier Device Package TO-252
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 40 V
Series Automotive, AEC-Q101
Power Dissipation (Max) 2.4W (Ta), 79.4W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 80A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJD80