minImg

PJQ1902_R1_00001

Panjit International Inc.

Prodotto No:

PJQ1902_R1_00001

Pacchetto:

3-DFN (0.6x1)

Batch:

-

Scheda tecnica:

-

Descrizione:

30V N-CHANNEL ENHANCEMENT MODE M

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 34 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 0.87 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V
Supplier Device Package 3-DFN (0.6x1)
Vgs(th) (Max) @ Id 1.1V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 700mW (Ta)
Package / Case 3-UFDFN
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number PJQ1902