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RJS6004TDPN-EJ#T2

Renesas Electronics America Inc

Prodotto No:

RJS6004TDPN-EJ#T2

Pacchetto:

TO-220AB-2L

Batch:

-

Scheda tecnica:

-

Descrizione:

DIODE SIC 600V 10A TO220AB-2L

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F -
Mounting Type Through Hole
Product Status Obsolete
Supplier Device Package TO-220AB-2L
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Series -
Package / Case TO-220-2
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Mfr Renesas Electronics America Inc
Voltage - DC Reverse (Vr) (Max) 600 V
Package Tube
Operating Temperature - Junction 150°C (Max)
Current - Average Rectified (Io) 10A