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SDD04S60

Infineon Technologies

Prodotto No:

SDD04S60

Pacchetto:

PG-TO252-3-11

Batch:

-

Scheda tecnica:

-

Descrizione:

DIODE SIL CARB 600V 4A TO252-31

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 150pF @ 0V, 1MHz
Mounting Type Surface Mount
Product Status Obsolete
Supplier Device Package PG-TO252-3-11
Current - Reverse Leakage @ Vr 200 µA @ 600 V
Series CoolSiC™+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 4 A
Mfr Infineon Technologies
Voltage - DC Reverse (Vr) (Max) 600 V
Package Tape & Reel (TR)
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 4A
Base Product Number SDD04S