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SI3911DV-T1-E3

Vishay Siliconix

Prodotto No:

SI3911DV-T1-E3

Produttore:

Vishay Siliconix

Pacchetto:

6-TSOP

Batch:

-

Scheda tecnica:

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Descrizione:

MOSFET 2P-CH 20V 1.8A 6TSOP

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

FET Feature Logic Level Gate
Configuration 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 145mOhm @ 2.2A, 4.5V
Supplier Device Package 6-TSOP
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Drain to Source Voltage (Vdss) 20V
Series -
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Power - Max 830mW
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 1.8A
Package Cut Tape (CT)
Base Product Number SI3911