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SIS780DN-T1-GE3

Vishay Siliconix

Prodotto No:

SIS780DN-T1-GE3

Produttore:

Vishay Siliconix

Pacchetto:

PowerPAK® 1212-8

Batch:

-

Scheda tecnica:

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Descrizione:

MOSFET N-CH 30V 18A PPAK1212-8

Quantità:

Consegna:

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Pagamento:

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In magazzino : 1

Minimo: 1 Multipli: 1

Qty

Prezzo unitario

Prezzo Ext

  • 1

    $0.627

    $0.627

  • 10

    $0.53295

    $5.3295

  • 100

    $0.3705

    $37.05

  • 500

    $0.289237

    $144.6185

  • 1000

    $0.235106

    $235.106

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Body)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 722 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 13.5mOhm @ 15A, 10V
Supplier Device Package PowerPAK® 1212-8
Vgs(th) (Max) @ Id 2.3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 27.7W (Tc)
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIS780