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SSM6N61NU,LF

Toshiba Semiconductor and Storage

Prodotto No:

SSM6N61NU,LF

Pacchetto:

6-UDFNB (2x2)

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET 2N-CH 20V 4A UDFN

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate, 1.5V Drive
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 33mOhm @ 4A, 4.5V
Supplier Device Package 6-UDFNB (2x2)
Vgs(th) (Max) @ Id 1V @ 1mA
Drain to Source Voltage (Vdss) 20V
Series -
Package / Case 6-WDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Power - Max 2W
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 4A
Package Tape & Reel (TR)
Base Product Number SSM6N61