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APT38F80B2

Microchip Technology

Prodotto No:

APT38F80B2

Pacchetto:

T-MAX™ [B2]

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-CH 800V 41A T-MAX

Quantità:

Consegna:

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Pagamento:

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8070 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 240mOhm @ 20A, 10V
Supplier Device Package T-MAX™ [B2]
Vgs(th) (Max) @ Id 5V @ 2.5mA
Drain to Source Voltage (Vdss) 800 V
Series POWER MOS 8™
Power Dissipation (Max) 1040W (Tc)
Package / Case TO-247-3 Variant
Technology MOSFET (Metal Oxide)
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 41A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number APT38F80