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G3S06510B

Global Power Technology-GPT

Prodotto No:

G3S06510B

Pacchetto:

TO-247AB

Batch:

-

Scheda tecnica:

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Descrizione:

SIC SCHOTTKY DIODE 650V 10A 3-PI

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Mounting Type Through Hole
Product Status Active
Supplier Device Package TO-247AB
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Series -
Package / Case TO-247-3
Technology SiC (Silicon Carbide) Schottky
Diode Configuration 1 Pair Common Cathode
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 5 A
Mfr Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max) 650 V
Package Cut Tape (CT)
Current - Average Rectified (Io) (per Diode) 27A (DC)
Operating Temperature - Junction -55°C ~ 175°C