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GC05MPS12-252

GeneSiC Semiconductor

Prodotto No:

GC05MPS12-252

Pacchetto:

TO-252-2

Batch:

-

Scheda tecnica:

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Descrizione:

DIODE SIL CARB 1.2KV 27A TO252-2

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 359pF @ 1V, 1MHz
Mounting Type Surface Mount
Product Status Obsolete
Supplier Device Package TO-252-2
Current - Reverse Leakage @ Vr 4 µA @ 1200 V
Series SiC Schottky MPS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 5 A
Mfr GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max) 1200 V
Package Tape & Reel (TR)
Operating Temperature - Junction -55°C ~ 175°C
Current - Average Rectified (Io) 27A
Base Product Number GC05MPS12