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PJP35N06A_T0_00001

Panjit International Inc.

Prodotto No:

PJP35N06A_T0_00001

Pacchetto:

TO-220AB

Batch:

-

Scheda tecnica:

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Descrizione:

60V N-CHANNEL ENHANCEMENT MODE M

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Mounting Type Through Hole
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 21mOhm @ 20A, 10V
Supplier Device Package TO-220AB
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series -
Power Dissipation (Max) 2W (Ta), 104W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta), 35A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number PJP35