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SQ2364EES-T1_BE3

Vishay Siliconix

Prodotto No:

SQ2364EES-T1_BE3

Produttore:

Vishay Siliconix

Pacchetto:

SOT-23-3 (TO-236)

Batch:

-

Scheda tecnica:

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Descrizione:

N-CHANNEL 60-V (D-S) 175C MOSFET

Quantità:

Consegna:

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Pagamento:

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In magazzino : 2047

Minimo: 1 Multipli: 1

Qty

Prezzo unitario

Prezzo Ext

  • 1

    $0.608

    $0.608

  • 10

    $0.5206

    $5.206

  • 100

    $0.362235

    $36.2235

  • 500

    $0.282815

    $141.4075

  • 1000

    $0.229881

    $229.881

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 240mOhm @ 2A, 4.5V
Supplier Device Package SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max) 3W (Tc)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)