06N06L

Goford Semiconductor

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06N06L

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Package:

SOT-23-3L

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N60V,RD(MAX)<42M@10V,RD(MAX)<46M

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	765 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	2.4 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	42mOhm @ 3A, 10V
Supplier Device Package	SOT-23-3L
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	960mW
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	5.5A
Vgs (Max)	±20V
Package	Tape & Reel (TR)