APT11N80KC3G

Microsemi Corporation

Product No:

APT11N80KC3G

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Package:

TO-220 [K]

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Description:

MOSFET N-CH 800V 11A TO220

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1585 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	450mOhm @ 7.1A, 10V
Supplier Device Package	TO-220 [K]
Vgs(th) (Max) @ Id	3.9V @ 680µA
Drain to Source Voltage (Vdss)	800 V
Series	CoolMOS™
Power Dissipation (Max)	156W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube