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APT80SM120B

Microsemi Corporation

Product No:

APT80SM120B

Manufacturer:

Microsemi Corporation

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

SICFET N-CH 1200V 80A TO247

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 20 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 55mOhm @ 40A, 20V
Supplier Device Package TO-247
Vgs(th) (Max) @ Id 2.5V @ 1mA
Drain to Source Voltage (Vdss) 1200 V
Series -
Power Dissipation (Max) 555W (Tc)
Package / Case TO-247-3
Technology SiCFET (Silicon Carbide)
Mfr Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Vgs (Max) +25V, -10V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Bulk