APTMC120AM08CD3AG

Microchip Technology

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APTMC120AM08CD3AG

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MOSFET 2N-CH 1200V 250A D3

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	9500pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs	490nC @ 20V
Mounting Type	Chassis Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	10mOhm @ 200A, 20V
Supplier Device Package	D3
Vgs(th) (Max) @ Id	2.2V @ 10mA (Typ)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	D-3 Module
Technology	Silicon Carbide (SiC)
Power - Max	1100W
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	250A (Tc)
Package	Bulk
Base Product Number	APTMC120