AUIRF1010EZS

Infineon Technologies

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AUIRF1010EZS

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Package:

PG-TO263-3

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Description:

AUIRF1010 - 55V-60V N-CHANNEL AU

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.5mOhm @ 51A, 10V
Supplier Device Package	PG-TO263-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	HEXFET®
Power Dissipation (Max)	140W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk