BSB056N10NN3GXUMA1

Infineon Technologies

Product No:

BSB056N10NN3GXUMA1

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Package:

MG-WDSON-2, CanPAK M™

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Description:

MOSFET N-CH 100V 9A/83A 2WDSON

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	5.6mOhm @ 30A, 10V
Supplier Device Package	MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id	3.5V @ 100µA
Drain to Source Voltage (Vdss)	100 V
Series	OptiMOS™
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Package / Case	3-WDSON
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 83A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSB056