BSB165N15NZ3G

Infineon Technologies

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BSB165N15NZ3G

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Package:

MG-WDSON-2-9

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Description:

BSB165N15 - 12V-300V N-CHANNEL P

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	16.5mOhm @ 30A, 10V
Supplier Device Package	MG-WDSON-2-9
Vgs(th) (Max) @ Id	4V @ 110µA
Drain to Source Voltage (Vdss)	150 V
Series	OptiMOS®
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Package / Case	DirectFET™ Isometric MZ
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 45A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Package	Bulk