BSC005N03LS5ATMA1

Infineon Technologies

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BSC005N03LS5ATMA1

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PG-TDSON-8 FL

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TRENCH <= 40V

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In Stock : 8625

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	0.55mOhm @ 50A, 10V
Supplier Device Package	PG-TDSON-8 FL
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	OptiMOS™
Power Dissipation (Max)	3W (Ta), 188W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	42A (Ta), 433A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)