BSC090N03MSG

Infineon Technologies

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BSC090N03MSG

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Package:

PG-TDSON-8-5

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Description:

BSC090N03 - 12V-300V N-CHANNEL P

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9mOhm @ 30A, 10V
Supplier Device Package	PG-TDSON-8-5
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	OptiMOS™ 3
Power Dissipation (Max)	2.5W (Ta), 32W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 48A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk